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| BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM It dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns TO-220AB F = 60 Hz F = 50 Hz Tc = 100C t = 16.7 ms t = 20 ms Value 25 260 250 340 Tj = 125C 50 Unit A A As A/s tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature range tp = 10 ms tp = 20 s Tj = 25C Tj = 125C Tj = 125C VDRM/VRRM + 100 V A W C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) SNUBBERLESSTM and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 33 RL = 3.3 k Tj = 125C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 50 70 80 500 13 35 1.3 0.2 75 80 100 1000 22 V/s A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Tj = 125C Test Conditions RL = 33 Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 80 70 160 500 10 V/s V/s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125C (dV/dt)c (2) (dI/dt)c =13.3A/ms Tj = 125C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 35 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX. Value 1.55 0.85 16 5 3 Unit V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 0.8 60 Unit C/W C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTBV/BTA26 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA26 Marking BTB/BTA26 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F ig. 1 Maximum power dis s ipation vers us R MS : on-s ta te current (full cycle). 30 25 20 15 10 5 0 0 5 IT (R MS ) (A ) 10 15 20 25 P (W) 30 25 20 15 10 5 0 0 25 50 T c (C ) 75 100 125 B TA 24 F ig. 2 -1: R MS on-s tate current vers us cas e temperature (full cycle). IT (R MS ) (A ) B T B /T 25 B TA 25/26 F ig. 3 R ela tive variation of thermal impedance : vers us puls e duration. F ig. 4 : values ). O n-s tate characteris tics (ma ximum 1E +0 K =[Zth/R th] Zth(j-c) 300 100 IT M (A ) T j max 1E -1 Zth(j-a) B TA/B T B 24/T 25 1E -2 10 Zth(j-a) B TA26 T j=25C tp (s ) 1E -3 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 V T M (V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T j max. V to = 0.85 V R d = 16 m 4.0 4.5 F ig. 5 S urge peak on-s tate current versus : number of cycles. IT S M (A ) 300 250 200 150 100 50 0 t=20ms Non repetitive T j initial=25C One cycle R epetitive T c=75C Number of ycles c 1 10 100 1000 BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F ig. 6 Non-repetitive s urge peak on-s tate : current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of It. IT S M (A ),I (A ) t s 3000 T j initial=25C dI/dt limitation: 50A /s F ig. 7 R elative va riation of gate trigger current, : holding current and la tching current versus junction temperature (typical va lues ). IG T,IH,IL [T j] / IG,IH,IL [T j=25C ] T 2.5 2.0 IG T 1000 1.5 IT S M 1.0 0.5 IH & IL tp (ms ) 100 0.01 0.10 1.00 It T j(C ) 10.00 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. 8 R elative varia tion of critical rate of : decreas e of main current vers us (dV /dt)c (typica l values ). (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 B W/C W/T 2535 1.4 B 1.2 1.0 0.8 0.6 (dV /dt)c (V /s ) 0.4 0.1 1.0 10.0 F ig. 9 R elative variation of critical rate of : decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 100.0 T j (C ) 0 25 50 75 100 125 0 |
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